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Cembrane – Fertigung

Manufacturer of silicon carbide ceramic membranes (SiC) for water and wastewater treatment

Cembrane Logo

Cembrane A/S

Lynge (Denmark) · Hutto, Texas (USA) · Sales offices: Germany · Australia · Singapore (Southeast Asia) · MENANew on Amplifa

2014Founded
A/S (Aktieselskab), VAT DK36422289Legal form
Lynge, Denmark · Hutto, Texas, USAProduction sites
> 450 installations in over 60 countriesInstalled technology

About Cembrane

Cembrane A/S is a manufacturer of silicon carbide ceramic membranes (SiC), founded in 2014 in Lynge, Denmark, serving OEMs and system integrators in water and wastewater treatment. The patented flat membrane process begins with the extrusion of SiC powder into membrane substrates, which are fired at over 2,000 °C; a second layer of SiC powder is then applied and fired again to form the micropores of the membrane plate. The fired plates are assembled into modules (SiCBlox, SiCBlox FX) and into stacks or towers. The chemically inert, permanently hydrophilic membranes filter suspended solids, bacteria, viruses, oil, PFAS and micropollutants from drinking water and wastewater in both municipal and industrial applications. Production takes place in Lynge (25 km north of Copenhagen) and in Hutto, Texas (USA); sales offices include Germany, Australia and Southeast Asia. According to the company, the technology is integrated in more than 450 installations in over 60 countries. Since November 2021, Cembrane has been part of the Ovivo Group (owner: SKion Water GmbH) and operates as an Aktieselskab (A/S).

Site
Lynge, Denmark
Processes
Extrusion of SiC membrane substrates (production of flat membranes), Sintering/firing of SiC substrates at over 2,000 °C, Coating of substrates with SiC powder layer to form the micropores (proprietary process), Assembly of SiC plates into membrane modules and stacks/towers, Production of SiC flat membrane modules (SiCBlox / SiCBlox FX) for water and wastewater treatment, Custom water treatment solutions, OEM/system integrator supplier, Technical support and partnership program (Cembrane Certified Partner Program)
Materials
Silicon Carbide (SiC)
Certificates
NSF/ANSI 61, NSF/ANSI 419, NSF/ANSI 61 (HOT)
Founded
2014
Industries
Drinking water treatment (municipal), Municipal wastewater treatment, Industrial wastewater, Water reuse
  1. 01

    Preparation of SiC powder into a paste

  2. 02

    Extrusion of the membrane substrate

  3. 03

    Firing of the substrate at over 2,000 °C

  4. 04

    Coating with SiC powder layer to form the micropores

  5. 05

    Refiring into a monolithic membrane plate

  6. 06

    Assembly of SiC plates into modules (SiCBlox)

  7. 07

    Assembly of modules into stacks and towers

Materials & Processes

SiC

Silicon Carbide (SiC)

A permanently hydrophilic, chemically inert ceramic material that repels organic foulants and oil and withstands temperatures, pH 2–12, chemicals and high pressure.

Locations

Standort Lynge, Denmark

Lynge, Denmark

DK

Headquarters & Production

Materials
Silicon Carbide (SiC)
  • Extrusion line for membrane substrates
  • Firing kiln (>2,000 °C)
Standort Hutto, Texas, USA

Hutto, Texas, USA

US

Production

Materials
Silicon Carbide (SiC)
  • Extrusion line for membrane substrates
  • Firing kiln (>2,000 °C)

Components & Products

SiC flat membrane plate
SiC flat membrane plateExtrusion & sintering · Water treatment
SiCBlox membrane module
SiCBlox membrane moduleAssembly · Drinking/wastewater treatment
Membrane tower (modules in stack)
Membrane tower (modules in stack)Module assembly · Municipal/industrial water treatment

Inside the production

SiC membrane manufacturing process (schematic)
SiC membrane manufacturing process (schematic)
SiC filtration principle
SiC filtration principle
Industrial production automation
Industrial production automation
Robotic welding system in production
Robotic welding system in production
Laboratory microscope for materials analysis
Laboratory microscope for materials analysis
Materials testing in the laboratory
Materials testing in the laboratory

Industries

Drinking water treatment (municipal)Municipal wastewater treatmentIndustrial wastewaterWater reuse

Processes & technical limits

ProcessesToleranceMax. partWeightLot sizeMaterials
Extrusion of SiC membrane substrates (production of flat membranes)Forming––––Silicon Carbide (SiC)
Sintering/firing of SiC substrates at over 2,000 °CHeat treatment––––Silicon Carbide (SiC)
Coating of substrates with SiC powder layer to form the micropores (proprietary process)Surface––––Silicon Carbide (SiC)
Assembly of SiC plates into membrane modules and stacks/towersAssembly––––Silicon Carbide (SiC)
Production of SiC flat membrane modules (SiCBlox / SiCBlox FX) for water and wastewater treatmentPlastics––––Silicon Carbide (SiC)

3 Anlagen & Maschinen

MachineManufacturer / modelQuantityWorking areaYear builtSite
Extrusion line for membrane substrates––––Lynge, Denmark / Hutto, Texas, USA
Firing kiln (>2,000 °C) for SiC ceramics––––Lynge, Denmark / Hutto, Texas, USA
Industrial robots (welding robots, production automation)––––Lynge, Denmark / Hutto, Texas, USA

Additional services

Custom water treatment solutionsOEM/system integrator supplierTechnical support and partnership program (Cembrane Certified Partner Program)

Reference customers

Ovivo (exclusive licensee and parent group)

Quality & Certification

The SiCBlox membranes are certified for drinking water under NSF/ANSI 61 (HOT) and NSF/ANSI 419; the NSF/ANSI 419 testing demonstrated a mean log reduction of 4.52 (min. 4.22) for Cryptosporidium surrogates at up to 425 LMH. In-house testing and analysis laboratories support materials development.

EvidenceLynge
NSF/ANSI 61 (HOT)
NSF/ANSI 419

History

  1. 2014

    Founded in Lynge, Denmark

  2. 2018

    Ovivo concludes an exclusive licensing agreement in September and acquires a minority stake

  3. 2021

    On 1 November, Cembrane joins the Ovivo Group (owner: SKion Water GmbH, Germany); Lasse Andreassen remains CEO

  4. 2024

    SiCBlox membranes achieve NSF/ANSI 419 drinking water certification on 7 March

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