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ELEMENT 3-5 – Fertigung

Develops and manufactures epitaxy production systems and monocrystalline templates for wide-bandgap semiconductors

ELEMENT 3-5 Logo

ELEMENT 3-5 GmbH

BaesweilerNew on Amplifa

2010Founded (spin-off of RWTH Aachen / AIXaTECH GmbH)
< 50Employees in Germany
353 Mio. EUREU state aid for SiC epiwafer fab in Baesweiler (2026)
< 300 °CProcess temperature of Next Level Epitaxy

About ELEMENT 3-5

ELEMENT 3-5 GmbH is a semiconductor company founded in 2010 as a spin-off of RWTH Aachen (predecessor: AIXaTECH GmbH), headquartered in Baesweiler near Aachen. The company develops and manufactures epitaxy production systems based on its own Next Level Epitaxy technology, which deposits monocrystalline layers at process temperatures below 300 °C — with energy savings of up to 90%, up to ten times higher throughput, and without the use of toxic process gases. Core products are the ACCELERATOR 3500K production system for monocrystalline templates for wide-bandgap semiconductors (including LEDs, miniLEDs, microLEDs, HEMTs, power electronics) and the ENABLER 150K system for monocrystalline bulk acoustic wave filters based on AlN and AlScN. In addition to the systems business, ELEMENT 3-5 offers substrate coating in its own technical facility, process development, technology roadmaps, as well as on-site process support and monitoring at the customer's premises. The materials processed are primarily silicon carbide (SiC) and III-V compound semiconductors. With an EU state aid approval of EUR 353 million (2026), the company is building a fab for SiC epiwafers in Baesweiler. The team comprises fewer than 50 employees in Germany; in 2025 the company was named 'Innovator of the Year' (TOP 100, size class A).

Site
Baesweiler
Processes
Next Level Epitaxy (plasma epitaxy, production of monocrystalline layers/templates), SiC epiwafer production, Deposition of monocrystalline structures at process temperatures below 300 °C, Epitaxy for the production of monocrystalline templates for LEDs, miniLEDs, microLEDs and HEMTs, Epitaxy for the production of monocrystalline bulk acoustic wave filters (BAW filters), Epitaxy with integrated nanostructuring (laser structuring, EPIWIN project), Epitaxy of semiconductor layers (Next Level Epitaxy), Manufacture of monocrystalline templates/epiwafers
Materials
Silicon carbide, AlN, AlScN, Wide-bandgap semiconductors (compounds of groups 3 and 5), Wide-bandgap semiconductors (III-V compounds)
Certificates
ISO 9001
Founded
2010
Employees
< 50 (Germany)
Industries
Semiconductor industry, LED / miniLED / microLED displays, Power electronics (SiC power semiconductors), Telecommunications (BAW filters), Lighting
  1. 01

    Requirements analysis and technology roadmap

  2. 02

    Substrate coating in the company's own technical facility

  3. 03

    Characterization and fine-tuning of processes

  4. 04

    Series production of the epitaxy systems

  5. 05

    Commissioning and on-site process support at the customer

  6. 06

    Monitoring of process characteristics and specifications

Materials & Processes

SiC

Silicon carbide

Base material for the planned SiC epiwafer fab and power electronics applications.

AlN

AlN

Material for monocrystalline bulk acoustic wave filters in the ENABLER 150K system.

AlScN

AlScN

Alternative filter material choice in the ENABLER 150K for higher telecommunications frequencies.

III-V

Wide-bandgap semiconductors (III-V compounds)

Deposition of new material stacks beyond conventional methods thanks to low process temperature.

Sites

Standort Baesweiler

Baesweiler

DE

Headquarters, technical facility and production

Lot size
Prototype to series (epitaxy systems)
Materials
SiC, AlN, AlScN, III-V semiconductors
  • ACCELERATOR 3500K epitaxy production system
  • ENABLER 150K epitaxy system for BAW filters

Systems & Components

ACCELERATOR 3500K
ACCELERATOR 3500KPlasma epitaxy · Wide-bandgap semiconductors, LED displays, power electronics
ENABLER 150K
ENABLER 150KPlasma epitaxy · Telecommunications (BAW filters)
Monocrystalline template / epiwafer
Monocrystalline template / epiwaferNext Level Epitaxy · Semiconductor industry

Inside the production

View into wafer production
View into wafer production
Epiwafer surfaces
Epiwafer surfaces
Wafer handling in the cleanroom
Wafer handling in the cleanroom

Industries

Semiconductor industryLED / miniLED / microLED displaysPower electronics (SiC power semiconductors)Telecommunications (BAW filters)Lighting

Processes & technical limits

ProcessesToleranceMax. partWeightLot sizeMaterials
Next Level Epitaxy (plasma epitaxy, production of monocrystalline layers/templates)Coating/Semiconductor manufacturing––––Silicon carbide (SiC), Wide-bandgap semiconductors, Compounds of groups 3 and 5 (III-V), temperature-sensitive substrates
SiC epiwafer productionCoating/Semiconductor manufacturing––––Silicon carbide (SiC)
Deposition of monocrystalline structures at process temperatures below 300 °CCoating/Semiconductor manufacturing––––III-V compound semiconductors, Wide-bandgap semiconductors
Epitaxy for the production of monocrystalline templates for LEDs, miniLEDs, microLEDs and HEMTsCoating/Semiconductor manufacturing––––Wide-bandgap semiconductors, III-V compound semiconductors
Epitaxy for the production of monocrystalline bulk acoustic wave filters (BAW filters)Coating/Semiconductor manufacturing––––AlN, AlScN
Epitaxy with integrated nanostructuring (laser structuring, EPIWIN project)Coating/Semiconductor manufacturing––––Wide-bandgap semiconductors

2 Anlagen & Maschinen

MachineManufacturer / modelQuantityWorking areaYear builtSite
Epitaxy production system (Next Level Epitaxy, plasma technology)ELEMENT 3-5 GmbH ACCELERATOR 3500K–––Baesweiler
Epitaxy system for monocrystalline bulk acoustic wave filtersELEMENT 3-5 GmbH ENABLER 150K–––Baesweiler

Additional services

Epitaxy of semiconductor layers (Next Level Epitaxy)Manufacture of monocrystalline templates/epiwafersProcess development and technology roadmap for customersSubstrate coating with own equipmentOn-site process support and fine-tuningMonitoring of process characteristics and specifications

Reference customers

Pilot customers (not named individually; first system deliveries in 2025)

Quality

Process characteristics and specifications are monitored through characterization and continuous monitoring; the vertical alignment of the substrates enables particle-free deposition with high homogeneity and reproducibility.

EvidenceBaesweiler
ISO 9001

History

  1. 2010

    Founded as AIXaTECH GmbH as a spin-off of RWTH Aachen by Dr. Yilmaz Dikme and others

  2. 2015

    Independent validation of the technology by Dr. Yilmaz Dikme and Dr. Volker Sinhoff; Volker Sinhoff takes over as Managing Director

  3. 2022

    Series A financing (led by AVV Investment GmbH, amount in the tens of millions); Ghassan Barbar takes over product management/sales for the ACCELERATOR 3500K

  4. 2022

    Move into the new headquarters building, Robert-Koch-Str. 6a, 52499 Baesweiler (ready for occupancy on 1 October)

  5. 2024

    Funding approval for the GREEN EPITAXY lighthouse project in the Rhenish mining region

  6. 2025

    Market entry with the first ACCELERATOR 3500K systems at pilot customers; award 'Innovator of the Year' (TOP 100, size class A) on 27 June

  7. 2025

    Exhibition at the NRW Nano Conference in Dortmund (30.09.–01.10.)

  8. 2026

    EU Commission approves EUR 353 million in state aid for a SiC epiwafer fab in Baesweiler

  9. 2026

    Visit by NRW Minister of Economic Affairs Mona Neubaur in Baesweiler as part of the summer tour

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