Manufacturer of III-V compound semiconductor substrate wafers made of GaAs, InP and GaN for micro- and optoelectronics.
Freiberger Compound Materials GmbH
Freiberg · El Dorado Hills, CA (USA) · Taipei (Taiwan)New on Amplifa
About Freiberger Compound Materials
Freiberger Compound Materials GmbH (FCM), based in Freiberg (Saxony), develops, manufactures and distributes substrate wafers made from the compound semiconductors gallium arsenide (GaAs), indium phosphide (InP) and gallium nitride (GaN) for micro- and optoelectronic applications. Production begins with the high-pressure synthesis of polycrystalline GaAs and InP from high-purity raw materials; single crystals (ingots) are then grown from these using the VGF or LEC method, and for GaN via HVPE from the gas phase. This is followed by mechanical crystal processing, etching, polishing and final cleaning to produce wafers with Epiready surfaces for direct use in epitaxy processes. The products are characterized by extensive analysis and measurement procedures (including TTV, TIR, Bow, Warp). Approximately 350 employees work on a cleanroom area of 1,700 m²; since 1995, over 200 million euros have been invested in the production facility. Customers are epi houses and device manufacturers in high-frequency, micro- and optoelectronics, served via own offices in the USA and Taiwan as well as partners in Japan and Korea.
- Site
- Freiberg
- Processes
- High-pressure synthesis GaAs, High-pressure synthesis InP, Crystal growth VGF (Vertical Gradient Freeze), Crystal growth LEC (Liquid Encapsulated Czochralski), Crystal growth HVPE (gas phase), Mechanical crystal processing and wafer manufacturing, Final cleaning of wafers, Chemical-mechanical polishing of III-V semiconductor substrates
- Materials
- Gallium arsenide (GaAs), Indium phosphide (InP), Gallium nitride (GaN), Gallium, Arsenic, Indium, Phosphorus, Liquid Encapsulated Czochralski (LEC)
- Certificates
- ISO 9001:2015, ISO 14001:2015, ISO 50001:2018, ISO 9001, ISO 14001, ISO 50001
- Founded
- 1995
- Employees
- 350
- Industries
- Microelectronics, Optoelectronics, High-frequency electronics / wireless communication, LED / Laser / VCSEL, Solar / PV, Automotive electronics
- 01
High-pressure synthesis GaAs (ingots up to 10 inches) or InP synthesis
- 02
Crystal growth VGF / LEC or GaN-HVPE
- 03
Mechanical crystal processing and wafer manufacturing (3"–8")
- 04
Etching
- 05
Chemical-mechanical polishing
- 06
Final cleaning
- 07
Analysis and measurement procedures for characterization (TTV, TIR, Bow, Warp)
- 08
Worldwide distribution via own offices and partners
Materials and Processes
Gallium arsenide (GaAs)
Substrate wafers from crystals grown by VGF (low dislocation density) or LEC for high-frequency and optoelectronics.
Indium phosphide (InP)
Structurally perfect crystals grown by VGF for high-frequency electronics; doping to set conductivity type and resistivity.
Gallium nitride (GaN)
Crystals and wafers, among others from the gas phase via HVPE, for GaN transistors.
Liquid Encapsulated Czochralski (LEC)
Growth method for material for large-area devices with lower current density (e.g. MESFETs, pHEMTs).
Vertical Gradient Freeze (VGF)
Growth method with a low temperature gradient for low-dislocation material (e.g. HBTs, LEDs, lasers).
Hydride Vapor Phase Epitaxy (HVPE)
Gas-phase process for the production of GaN crystals.
Locations
Freiberg – Am Junger-Löwe-Schacht 5
DEHeadquarters and manufacturing (Fab1–4)
- Part weight / size
- Wafers 3"–8"
- Materials
- GaAs, InP, GaN
- High-pressure synthesis system (high-pressure vessel with graphite heater)
- VGF system (multiple heating zones)
- LEC system
- Quartz glass reactor (InP synthesis)
- HVPE system
- Cleanroom (1,700 m²)
- Analysis and measurement technology
Freiberg – Am Junger Löwe Schacht 2
DEManufacturing (certified)
- Materials
- III-V compound semiconductors
Freiberg – Am St.-Nicolas-Schacht 4
DEManufacturing (certified)
- Materials
- III-V compound semiconductors
El Dorado Hills, CA
USSales office (FCM USA, Inc.)
Taipei
TWSales office (FCM Taiwan Ltd.)
Industries
Processes & technical limits
| Processes | Tolerance | Max. part | Weight | Lot size | Materials |
|---|---|---|---|---|---|
| High-pressure synthesis GaAsCasting | – | Ingots up to 10 inches | – | – | GaAs |
| High-pressure synthesis InPCasting | – | – | – | – | InP |
| Crystal growth VGF (Vertical Gradient Freeze)Casting | – | – | – | – | GaAs, InP |
| Crystal growth LEC (Liquid Encapsulated Czochralski)Casting | – | – | – | – | GaAs, GaN |
| Crystal growth HVPE (gas phase)Casting | – | – | – | – | GaN |
| Mechanical crystal processing and wafer manufacturingMachining | – | Wafer diameter 3" to 8" | – | – | GaAs, InP, GaN |
| Final cleaning of wafersSurface | – | – | – | – | GaAs, InP, GaN |
| Chemical-mechanical polishing of III-V semiconductor substratesSurface | – | – | – | – | GaAs, InP, GaN |
| EtchingSurface | – | – | – | – | GaAs, InP |
| Analysis and measurement procedures for characterization (TTV, TIR, Bow, Warp)Testing | – | – | – | – | GaAs, InP, GaN |
7 Anlagen & Maschinen
| Machine | Manufacturer / model | Quantity | Working area | Year built | Site |
|---|---|---|---|---|---|
| High-pressure synthesis system (high-pressure vessel with graphite heater) | – | – | – | – | Freiberg |
| VGF system (Vertical Gradient Freeze furnace with multiple heating zones) | – | – | – | – | Freiberg |
| LEC system (Liquid Encapsulated Czochralski) | – | – | – | – | Freiberg |
| Quartz glass reactor (InP synthesis) | – | – | – | – | Freiberg |
| Cleanroom manufacturing facility | – | – | 1,700 m² cleanroom area | – | Freiberg |
| HVPE system (GaN crystal production) | – | – | – | – | Freiberg |
| Analysis and measurement technology | – | – | – | – | Freiberg |
Additional services
Quality
Every single process step is monitored and all process data is automatically recorded; all products are characterized in comprehensive analysis and measurement procedures (TTV, TIR, Bow, Warp, among others). The quality management system is certified according to ISO 9001:2015 (DEKRA).
| Evidence | Freiberg |
|---|---|
| ISO 9001 | |
| ISO 14001 | |
| ISO 50001 |
History
- 1957
Founding of VEB Spurenmetalle Freiberg (SMF) as a state enterprise for ultra-pure materials and semiconductor materials
- 1982
Start of compound semiconductor production (GaAs, GaP, InP, InAs) at the site
- 1990
Takeover of the GaAs manufacturing technology from Wacker Siltronic AG; FEW renamed Freiberger Elektronikwerkstoffe GmbH
- 1992
Production of the first wafers using Wacker technology in Freiberg
- 1995
Founding of Freiberger Compound Materials GmbH on 31 August with 81 employees
- 2011
Dr. Michael Harz joins FCM as COO; Dr. Stefan Eichler becomes CTO
- 2019
Dr. Michael Harz assumes the position of CEO