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GTS – Fertigung

Development of TCAD software for physics-based device simulation in the semiconductor industry.

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Global TCAD Solutions GmbH

Vienna (AT)New on Amplifa

ViennaLocation

About Global TCAD Solutions

Global TCAD Solutions is a software company based in Vienna that develops TCAD tools (Technology Computer Aided Design) for the simulation of semiconductor devices. The portfolio includes the GTS Framework, the Nano Device Simulator (NDS), Minimos-NT, the VSP simulator and the GTS Cell Designer. The tools cover applications ranging from advanced CMOS logic (FinFET, nanosheet) to memory (VNAND, DRAM, emerging) and displays (a-Si, IGZO) as well as materials research (2D materials, TMD, ferroelectrics, GaN), power/analog/RF and cryogenic electronics. In addition to software licenses, GTS offers Technology Path-Finding and Design-Technology Co-Optimization (DTCO) as well as support by application engineers and training. Customers include companies such as Sony, NXP Semiconductors, Unisantis and Trusted Semiconductor Solutions as well as research institutes such as the Institute of Microelectronics of the Chinese Academy of Sciences and TU Wien.

Site
Vienna (AT)
Processes
TCAD Device Simulation (Nano Device Simulator, VSP, Minimos-NT), DTCO – Design-Technology Co-Optimization (Technology to Design, Cell Designer), Technology Path-Finding, Heavy-Ion Particle Simulation (Radiation Simulation), TCAD Software (GTS Framework), Nano Device Simulator (NDS), Victory/VSP Device Simulation, Minimos-NT Simulation
Materials
IGZO (amorphous oxide semiconductor), a-Si (amorphous silicon), GaN, SiGe (embedded S/D epitaxy), Silicon, 2D materials/TMD, Ferroelectric materials, Phase-change materials
Industries
Semiconductor Industry, Advanced CMOS Logic, Memory (VNAND, DRAM, Emerging), Displays (a-Si, IGZO), Materials Research (2D Materials, TMD, Ferroelectrics, GaN), Power/Analog/RF
  1. 01

    Requirements analysis at the customer

  2. 02

    TCAD simulation (NDS, VSP, Minimos-NT)

  3. 03

    DTCO / Technology to Design (Cell Designer)

  4. 04

    Technology Path-Finding

  5. 05

    Support & training by application engineers

Simulated Material Systems

Si

Silicon

Base material for CMOS device simulation, including heavy-ion particle simulation.

SiGe

SiGe (embedded S/D epitaxy)

Simulated in performance degradation studies on 2 nm nanosheet FETs.

IGZO

IGZO (amorphous oxide semiconductor)

Relevant band tail treatment for displays, DRAM and VNAND.

a-Si

a-Si (amorphous silicon)

Amorphous materials for display applications.

GaN

GaN

For power and materials research applications.

2D/TMD

2D materials/TMD

Materials research on future device concepts.

Ferro

Ferroelectric materials

Simulated in the context of emerging memory.

PCM

Phase-change materials

Material system for emerging memory applications.

Locations

Standort Vienna

Vienna

AT

Development & Support

Materials
Silicon, SiGe, IGZO, a-Si, GaN, 2D materials, ferroelectrics, PCM
  • GTS Framework
  • GTS Nano Device Simulator
  • Minimos-NT
  • VSP
  • GTS Cell Designer

Simulation Products & Applications

Advanced CMOS Logic (FinFET, Nanosheet)
Advanced CMOS Logic (FinFET, Nanosheet)Device Simulation · Semiconductor Industry
Memory (VNAND, DRAM, Emerging)
Memory (VNAND, DRAM, Emerging)Device Simulation · Semiconductor Industry
Displays (a-Si, IGZO)
Displays (a-Si, IGZO)Band Tail Simulation · Display Technology
Technology to Design (Layout, Cell, Circuit)
Technology to Design (Layout, Cell, Circuit)DTCO · Chip Development
Power / Analog / RF
Power / Analog / RFDevice Simulation · Power Electronics
2D Materials / Nanostructures
2D Materials / NanostructuresMaterial Simulation · Research

Inside the production

GTS Framework – Design of Experiments
GTS Framework – Design of Experiments
GTS Booth at ESSERC 2026
GTS Booth at ESSERC 2026
Heavy-Ion Particle Simulation
Heavy-Ion Particle Simulation

Industries

Semiconductor IndustryAdvanced CMOS LogicMemory (VNAND, DRAM, Emerging)Displays (a-Si, IGZO)Materials Research (2D Materials, TMD, Ferroelectrics, GaN)Power/Analog/RFCryogenic ElectronicsAcademic Research/Teaching

Processes & technical limits

ProcessesToleranceMax. partWeightLot sizeMaterials
TCAD Device Simulation (Nano Device Simulator, VSP, Minimos-NT)Engineering––––Silicon, SiGe, IGZO, a-Si, GaN, 2D materials, TMD, ferroelectric materials, Phase-change materials
DTCO – Design-Technology Co-Optimization (Technology to Design, Cell Designer)Engineering–––––
Technology Path-FindingEngineering–––––
Heavy-Ion Particle Simulation (Radiation Simulation)Testing––––Silicon

5 Anlagen & Maschinen

MachineManufacturer / modelQuantityWorking areaYear builtSite
TCAD Software: GTS FrameworkGlobal TCAD Solutions GTS Framework––––
TCAD Software: Nano Device SimulatorGlobal TCAD Solutions GTS Nano Device Simulator––––
TCAD Software: Minimos-NTGlobal TCAD Solutions Minimos-NT––––
TCAD Software: VSPGlobal TCAD Solutions VSP––––
TCAD Software: Cell DesignerGlobal TCAD Solutions GTS Cell Designer––––

Additional services

TCAD Software (GTS Framework)Nano Device Simulator (NDS)Victory/VSP Device SimulationMinimos-NT SimulationGTS Cell DesignerTechnology Path-FindingTechnology to Design (DTCO)Premium TCADSupport by Application EngineersTraining/Tutorials for Teaching

Reference customers

Unisantis Electronics Singapore Pte. Ltd.Sony CorporationNXP SemiconductorsTrusted Semiconductor SolutionsInstitute of Microelectronics, Chinese Academy of SciencesVienna University of Technology (Institute for Microelectronics)

Activities & Publications

  1. 2026

    Participation in SISPAD 2026 in Kumamoto, Japan (September 2026).

  2. 2026

    Participation in ESSERC 2026 with a focus on Design-Technology Co-Optimization (September 2026).

  3. 2026

    Publication on performance degradation mechanisms in 2 nm nanosheet FETs with embedded SiGe S/D (July 2026).

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