Manufacturer of vertically integrated SiC power semiconductors – from wafers to diodes and MOSFETs
Hunan San'an Semiconductor Co., Ltd
Hunan (CN) · Chongqing (CN)New on Amplifa
About Sanan Semiconductor
Sanan Semiconductor (Hunan San'an Semiconductor Co., Ltd) is a Chinese manufacturer of power semiconductors based on silicon carbide (SiC) and gallium nitride (GaN). The company operates a vertically integrated SiC production line (Mega Fab) covering the entire value chain from materials and wafers to finished devices. The product portfolio includes SiC Schottky diodes (SBD) in their fifth generation with voltage platforms of 650 V, 1200 V and 1700 V as well as SiC MOSFETs for power electronics applications; a cumulative 200 million units of the SiC diodes have been shipped. Fields of application include automotive, photovoltaics and energy storage, industrial applications, data centers and UPS systems, high-power household appliances, and charging technology. In 2023, Sanan Optoelectronics and STMicroelectronics founded a joint venture in Chongqing for SiC wafer production. Since 2024, Sanan Semiconductor has been cooperating with FAU Erlangen-Nürnberg in power electronics research and is expanding into overseas markets, including Japan and Europe.
- Site
- Hunan (CN)
- Processes
- SiC diode (SBD) manufacturing, 5th generation, 650V/1A-50A, 1200V/1A-60A, 1700V, SiC MOSFET power semiconductor manufacturing, Vertically integrated SiC production line (Whole Industry Chain Vertical Integration Manufacturing, Vertically integrated SiC semiconductor manufacturing (wafers to devices), Technical Support, Sales Channels
- Materials
- Silicon carbide (SiC), Gallium nitride (GaN)
- Industries
- Automotive, Renewable Energies (Photovoltaics, Energy Storage), Industrial, Data Centers / UPS, High-Power Household Appliances, Charging Technology / Charging Pile
- 01
SiC and GaN material and wafer manufacturing
- 02
Vertically integrated chip manufacturing (Mega Fab)
- 03
Device manufacturing of SiC diodes (SBD) and SiC MOSFETs
- 04
Quality management
- 05
Technical Support and sales channels
Materials & Semiconductor Materials
Silicon carbide (SiC)
Wide-bandgap semiconductor material for SiC diodes and SiC MOSFETs with reduced conversion losses and higher power density in power electronics systems.
Gallium nitride (GaN)
Wide-bandgap semiconductor material that Sanan Semiconductor carries in its portfolio alongside SiC wafers and devices.
Sites
Hunan
CNVertically integrated SiC manufacturing (Mega Fab)
- Materials
- SiC, GaN
- Vertically integrated SiC production line (Whole Industry Chain Vertical Integration Manufacturing Platform, Mega Fab)
Chongqing
CNJoint venture with STMicroelectronics for SiC wafer production
- Materials
- SiC
- SiC wafer production (joint venture Sanan Optoelectronics / STMicroelectronics)
Industries
Processes & technical limits
| Processes | Tolerance | Max. part | Weight | Lot size | Materials |
|---|---|---|---|---|---|
| SiC diode (SBD) manufacturing, 5th generation, 650V/1A-50A, 1200V/1A-60A, 1700VSemiconductor/chip manufacturing | – | – | – | – | Silicon carbide |
| SiC MOSFET power semiconductor manufacturingSemiconductor/chip manufacturing | – | – | – | – | Silicon carbide |
| Vertically integrated SiC production line (Whole Industry Chain Vertical Integration ManufacturingSemiconductor/chip manufacturing | – | – | – | – | Silicon carbide |
2 Anlagen & Maschinen
| Machine | Manufacturer / model | Quantity | Working area | Year built | Site |
|---|---|---|---|---|---|
| Mega Fab (vertically integrated SiC factory) | Sanan Semiconductor | – | – | – | – |
| SiC wafer production (joint venture Sanan Optoelectronics / STMicroelectronics) | Sanan Optoelectronics / STMicroelectronics | – | – | 2023 | Chongqing |
Additional services
Reference customers
History
- 2021
Hunan Sanan starts China's first vertically integrated SiC production line.
- 2023
Debut at SEMICON Taiwan; Sanan Optoelectronics and STMicroelectronics agree on a joint venture in Chongqing for SiC wafer production.
- 2024
Research agreement with FAU Erlangen-Nürnberg for power electronics (SiC); strategic cooperation with Vertiv Technology; expansion into overseas markets including an appearance at NEPCON JAPAN.
- 2025
Participation in the panel discussion 'Electrification Market & WBG Adoption' at the ISES EU Summit in Dresden.