Develops and manufactures semiconductors and embedded solutions for automotive, industrial, infrastructure and IoT applications.
Renesas Electronics Corporation
Tokyo (Headquarters) · Yonezawa · Oita · Nishiki · Naka · Takasaki · Saijo · Kawashiri · Kulim · Beijing · SuzhouNew on Amplifa
About Renesas Electronics
Renesas Electronics Corporation is a Japanese semiconductor manufacturer headquartered in Tokyo and, according to its own statements, employs more than 21,000 staff in over 30 countries. The portfolio includes microcontrollers (MCU), microprocessors (MPU), analog ICs, power and GaN semiconductors, sensor technology and connectivity solutions, complemented by software, development tools and reference designs. The products are used, among other things, in automotive engineering, industrial automation, consumer electronics, communications infrastructure, robotics, healthcare and AI data centers. In-house manufacturing facilities with IATF-16949 certification are located in Japan (including Yonezawa, Oita, Nishiki, Naka, Takasaki, Saijo, Kawashiri) as well as in Malaysia and China; the GaN technology is based on a vertically integrated in-house wafer fabrication. The company additionally supports customers with functional safety in accordance with ISO 26262, IEC 61508 and IEC/UL 60730, as well as with embedded security and Edge-AI development.
- Site
- Yonezawa
- Processes
- Embedded/System Solutions, Development Tools, Software & Reference Designs, AI/ML Development Environment (e-AI Translator, Reality AI Tools), Functional Safety Support (ISO 26262, IEC 61508, IEC/UL 60730), Technical Support, Support Communities, Knowledge Base
- Materials
- Gallium Nitride (GaN), PR40 Process Technology, Silicon
- Certificates
- ISO 9001, IATF 16949, Functional Safety Support (ISO 26262/IEC 61508)
- Employees
- >21000
- Industries
- Automotive, Industry/Industrial Automation, Consumer Electronics, Communications Infrastructure, IoT, Robotics
- 01
Chip Design
- 02
Wafer Fabrication
- 03
Test
- 04
Package & Final Test
- 05
Software and Development Tools
- 06
Technical Support
Technologies and Processes
Gallium Nitride (GaN)
Wide-bandgap semiconductors for discrete power GaN FETs, GaN drivers and controllers in applications from 45 W to over 10 kW, manufactured in the company's own wafer process.
PR40 Process Technology
Complementary bipolar process on bonded SOI substrates for high-voltage precision analog applications.
Silicon
Base material for MCU, MPU, analog and connectivity ICs.
Manufacturing Locations
Yonezawa
JPFactory
- Materials
- Semiconductors
Oita
JPFactory
- Materials
- Semiconductors
Nishiki
JPFactory
- Materials
- Semiconductors
Naka
JPFactory (Renesas Semiconductor Manufacturing)
- Materials
- Semiconductors
Takasaki
JPFactory (Renesas Semiconductor Manufacturing)
- Materials
- Semiconductors
Saijo
JPFactory (Renesas Semiconductor Manufacturing)
- Materials
- Semiconductors
Kawashiri
JPFactory (Renesas Semiconductor Manufacturing)
- Materials
- Semiconductors
Kulim
MYFactory (Renesas Semiconductor KL)
- Materials
- Semiconductors
Beijing
CNFactory (Renesas Semiconductor Beijing)
- Materials
- Semiconductors
Suzhou
CNFactory (Renesas Semiconductor Suzhou)
- Materials
- Semiconductors
Components








Inside the production







Industries
Additional services
Quality and Certifications
Renesas follows a group-wide quality policy with a uniform quality management system across sales, development and manufacturing; factories in Japan, Malaysia and China are certified to IATF 16949, and numerous group companies to ISO 9001. Testing and support services include reliability reports (also for former Intersil products) as well as functional safety support in accordance with ISO 26262, IEC 61508 and IEC/UL 60730.
| Evidence | Company |
|---|---|
| IATF 16949 | |
| ISO 9001 | |
| Functional Safety Support (ISO 26262/IEC 61508) |
History
- 2019
Introduction of the RA family of 32-bit Arm Cortex-M microcontrollers for IoT applications.
- 2024
Renesas rad-hard ICs (Intersil brand) on board JAXA's first Japanese lunar lander SLIM.
- 2026
Expansion of the GaN portfolio: 650 V GaN in the dual-side-cooled 8x8 mm package and first low-voltage GaN FETs for AI data centers and robotics.