Development of Gallium Nitride power semiconductors (D³GaN), power modules and traction inverter technology for electromobility
VisIC Technologies Ltd.
Ness Ziona, IsraelNew on Amplifa
About VisIC Technologies
VisIC Technologies Ltd., based in Ness Ziona, Israel, develops power semiconductors based on Gallium Nitride (GaN) using its proprietary D³GaN technology (Direct Drive D-Mode). The portfolio includes high-voltage power transistors, discrete GaN devices (V08 Power Switches), half-bridge power modules, traction inverter systems for BEVs above 150 kW, on-board charger solutions and high-voltage battery disconnect solutions. The D³GaN technology was developed for the high-reliability requirements of the automotive industry and offers lower losses, higher switching speeds and more compact designs than silicon and SiC reference designs. Development and validation take place at the headquarters in Ness Ziona; for packaging and assembly, VisIC works with partners such as KYOCERA AVX Salzburg. Cooperation partners and customers include ZF, AVL, hofer powertrain, Marelli Motorsport and the Politecnico di Torino (PEIC). Target industries are Automotive (e-drives, on-board chargers), Data Center, Industrial and Renewable Energy. Validation data demonstrates 130 kW at 99.7% efficiency for EV traction inverter applications. The company is certified according to ISO 9001, ISO 14001, ISO 45001 and ISO/IEC 27001.
- Site
- Ness Ziona, Israel
- Processes
- GaN power semiconductor development (D³GaN Technology, Direct Drive D-Mode), Traction inverter systems (GaN-based, >150 kW BEV), On-board charger solutions (D³GaN-based), Power module technology (D³GaN power module, half-bridge module), Discrete GaN power devices (V08 Power Switches), Multi-level 900V high-power inverter design and prototyping, 3-level 800V GaN inverter development (3L NPC, 650V GaN semiconductors, 400V/800V battery systems), High-voltage battery disconnection based on GaN switches
- Materials
- Gallium Nitride (GaN), Silicon (Si, reference technology), Silicon Carbide (SiC, reference technology), Gallium Nitride (GaN), Direct Drive D-Mode, Silicon (reference technology), Silicon Carbide (reference technology)
- Certificates
- ISO 9001:2015, ISO 14001:2015, ISO 45001:2018, ISO/IEC 27001:2022
- Industries
- Automotive (EV traction inverter, OBC), Data Center, Industrial, Renewable Energy
- 01
GaN chip and system development (D³GaN, Direct Drive D-Mode)
- 02
Design and prototyping of power modules and inverter topologies
- 03
Joint R&D with OEM, Tier-1 and research partners
- 04
Packaging and assembly with partners (e.g. KYOCERA AVX Salzburg)
- 05
Validation and testing (double pulse test, short-circuit protection).
- 06
Support in all development phases through to series adaptation
Materials & Technologies
Gallium Nitride (GaN), Direct Drive D-Mode
Proprietary GaN technology for high-voltage applications with the lowest losses per RDS(on), developed to meet the reliability requirements of the automotive industry.
Silicon (reference technology)
Comparison technology whose efficiency and power density limits are surpassed by the GaN-based multi-level inverters.
Silicon Carbide (reference technology)
Comparison technology; in WLTC tests, the D³GaN solution shows efficiency above comparable SiC designs.
Sites
Ness Ziona
ILHeadquarters, development and validation of GaN power semiconductors
- Lot size
- Prototype, small series
- Materials
- Gallium Nitride (GaN)
- Validation and testing of GaN power devices (double pulse test, short-circuit protection)
- Development of 3-level 800V GaN inverter systems
- Prototyping of multi-level 900V high-power inverters
Products & Devices
Inside the production
Industries
Processes & technical limits
| Processes | Tolerance | Max. part | Weight | Lot size | Materials |
|---|---|---|---|---|---|
| GaN power semiconductor development (D³GaN Technology, Direct Drive D-Mode)Engineering | – | – | – | – | Gallium Nitride (GaN) |
| Traction inverter systems (GaN-based, >150 kW BEV)Engineering | – | – | – | – | Gallium Nitride (GaN), Silicon, Silicon Carbide (SiC, comparison technology) |
| On-board charger solutions (D³GaN-based)Engineering | – | – | – | – | Gallium Nitride (GaN) |
| Power module technology (D³GaN power module, half-bridge module)Engineering | – | – | – | – | Gallium Nitride (GaN) |
| Discrete GaN power devices (V08 Power Switches)Engineering | – | – | – | – | Gallium Nitride (GaN) |
| Multi-level 900V high-power inverter design and prototypingEngineering | – | – | – | – | Gallium Nitride (GaN) |
| 3-level 800V GaN inverter development (3L NPC, 650V GaN semiconductors, 400V/800V battery systems)Engineering | – | – | – | – | Gallium Nitride (GaN) |
| High-voltage battery disconnection based on GaN switchesEngineering | – | – | – | – | Gallium Nitride (GaN) |
| Validation and testing of GaN power devices (double pulse test, short-circuit protection)Testing | – | – | – | – | Gallium Nitride (GaN) |
Additional services
Reference customers
Quality & Certification
The quality management system is certified by the SII-QCD (Standards Institution of Israel) and covers ISO 9001:2015, ISO 14001:2015, ISO 45001:2018 and ISO/IEC 27001:2022. Device validation includes double pulse testing, short-circuit protection investigation and switching behavior characterization.
| Evidence | Ness Ziona |
|---|---|
| ISO 9001:2015 | |
| ISO 14001:2015 | |
| ISO 45001:2018 | |
| ISO/IEC 27001:2022 |
History
- 2018
First ISO 9001 certification (24.01.2018)
- 2021
Partnership with hofer powertrain for the development of a 3-level 800V GaN inverter; first certification of ISO 14001 and ISO 45001; cooperation project Marelli Motorsport/Politecnico di Torino with VisIC V08 Power Switches
- 2022
Successful test of the 3-level GaN traction inverter with hofer powertrain; expansion of the collaboration with KYOCERA AVX Salzburg; adaptation of a Tier-1 manufacturer's module for next-generation inverter samples
Series B investment round of USD 26 million for next-generation GaN power solutions for electric mobility
- 2024
ISO 27001 first certification (05.11.2024); recertification of ISO 9001, ISO 14001, ISO 45001
- 2026
Participation in PCIM Expo 2026, CTI Symposium USA 2026 and CS MANTECH 2026 (validation data: 130 kW at 99.7% efficiency); AVL integration of D³GaN technology into a Tesla demonstrator vehicle