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Zadient – Fertigung

Ultra-high-purity SiC source material (8N) via CVD as well as substrates and process-critical components for the semiconductor industry

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Zadient

Germany · FranceNew on Amplifa

2 sitesSites in Germany and France
8N (99.999999%)Purity of the SiC source material

About Zadient

Zadient is a manufacturer of semiconductor materials covering the entire silicon carbide value chain. The company produces 8N ultra-high-purity silicon carbide source material (99.999999%) using the CVD process with batch-to-batch consistency for PVT crystal growth. At the German site, industrial production of CVD source material is being scaled up and the expansion toward process-critical components made of CVD SiC is being advanced. The French site is focused on crystal growth and the production of substrates. The materials are used in industries such as power electronics, mobility (electric vehicles, rail, aviation), energy technology, telecommunications/5G, data centers as well as space/radar. Zadient supplies the global semiconductor supply chain with feedstock materials that enable wafers, chips, power supply systems and RF components.

Site
Germany
Processes
CVD SiC Source Material Production, PVT Crystal Growth, Substrate and Component Manufacturing (SiC), CVD SiC source material (8N purity), Production of substrates and process-critical components, Scaling of industrial production
Materials
Silicon carbide (8N, 99.999999%), CVD SiC, Silicon carbide 8N (99.999999%), CVD silicon carbide
Certificates
Batch-to-batch consistency
Industries
Semiconductor industry, Power electronics, Automotive/E-mobility, Rail technology, Aviation, Energy technology (wind/solar, battery storage, smart grid)
  1. 01

    CVD SiC source material (8N)

  2. 02

    PVT crystal growth

  3. 03

    Wafer/substrates

  4. 04

    Process-critical SiC components

  5. 05

    Power electronics and systems (customers)

Materials and Processes

SiC

Silicon carbide 8N (99.999999%)

Ultra-high-purity CVD source material with batch-to-batch consistency for PVT crystal growth.

CVD SiC

CVD silicon carbide

Material for substrates and process-critical components.

Sites

Standort Germany

Germany

DE

CVD source material production, expansion into process-critical components

Materials
SiC 8N, CVD SiC
  • CVD equipment
Standort France

France

FR

Crystal growth and substrates

Materials
SiC

Products

CVD SiC source material
CVD SiC source materialCVD · Semiconductor industry
CVD SiC component
CVD SiC componentCVD SiC · Power electronics
SiC substrate/wafer
SiC substrate/waferCrystal growth · Semiconductor industry

Inside the production

Manufacturing of SiC semiconductor materials
Manufacturing of SiC semiconductor materials
SiC value chain
SiC value chain
Source material for crystal growth
Source material for crystal growth
Production facility
Production facility
Rail technology application
Rail technology application

Industries

Semiconductor industryPower electronicsAutomotive/E-mobilityRail technologyAviationEnergy technology (wind/solar, battery storage, smart grid)TelecommunicationsData centers5GSpace/Radar

Processes & technical limits

ProcessesToleranceMax. partWeightLot sizeMaterials
CVD SiC Source Material ProductionAdditive––––Silicon carbide 8N (99.999999%)
PVT Crystal GrowthAdditive––––SiC
Substrate and Component Manufacturing (SiC)Engineering––––CVD SiC

Additional services

CVD SiC source material (8N purity)Production of substrates and process-critical componentsScaling of industrial production

Quality

The CVD process results are designed for batch-to-batch consistency, as required by PVT crystal growth.

EvidenceGermanyFrance
Batch-to-batch consistency
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